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Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers

Identifieur interne : 000837 ( Main/Repository ); précédent : 000836; suivant : 000838

Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers

Auteurs : RBID : Pascal:13-0322856

Descripteurs français

Pascal (Inist)
- Mesure bruit, Transistor mobilité électron élevée, Bruit large bande, Amplificateur faible bruit, Paramètre critique, Courant drain, Mesure courant électrique, Impédance, Ionisation choc, Amplificateur large bande, Domaine fréquence GHz, Large bande, Cryogénie, Température cryogénique, Amplificateur hyperfréquence, Circuit intégré monolithique, Circuit intégré hyperfréquence, Circuit MMIC, Radioastronomie.

English descriptors

KwdEn :
- Critical parameter, Cryogenic temperature, Cryogenics, Drain current, Electric current measurement, GHz range, High electron mobility transistor, Impact ionization, Impedance, Low noise amplifier, MMIC, Microwave amplifier, Microwave integrated circuits, Monolithic integrated circuit, Noise measurement, Radio astronomy, Wide band, Wide band noise, Wideband amplifiers.

Abstract

The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, T_drain, in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistors with 50-Ω generator impedance. The dc I-V for the transistors under test are presented and effects of impact-ionization are noted. InP devices with both 100% and 75% indium mole fraction in channel are included. Examples of the design and measurement of very wideband low-noise amplifiers (LNAs) using the tested transistors are presented. At 20-K physical temperature the GaAs LNA achieves < 10-K noise over the 0.7-16-GHz range with 16 mW of power and an InP LNA measures < 20-K noise over the 6-50-GHz range with 30 mW of power.

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers</title>
<author><name sortKey="Akgiray, Ahmed H" uniqKey="Akgiray A">Ahmed H. Akgiray</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, California Institute of Technology</s1>
<s2>Pasadena, CA 91125</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Pasadena, CA 91125</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Weinreb, Sander" uniqKey="Weinreb S">Sander Weinreb</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, California Institute of Technology</s1>
<s2>Pasadena, CA 91125</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Pasadena, CA 91125</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Leblanc, Remy" uniqKey="Leblanc R">Rémy Leblanc</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>OMMIC</s1>
<s2>94453 Limeil-Brévannes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Limeil-Brévannes</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Renvoise, Michel" uniqKey="Renvoise M">Michel Renvoise</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>OMMIC</s1>
<s2>94453 Limeil-Brévannes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Limeil-Brévannes</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Frijlink, Peter" uniqKey="Frijlink P">Peter Frijlink</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>OMMIC</s1>
<s2>94453 Limeil-Brévannes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Limeil-Brévannes</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Lai, Richard" uniqKey="Lai R">Richard Lai</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Northrop Grumman Corporation</s1>
<s2>Redondo Beach, CA 90278</s2>
<s3>USA</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Northrop Grumman Corporation</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sarkozy, Stephen" uniqKey="Sarkozy S">Stephen Sarkozy</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Northrop Grumman Corporation</s1>
<s2>Redondo Beach, CA 90278</s2>
<s3>USA</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Northrop Grumman Corporation</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0322856</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0322856 INIST</idno>
<idno type="RBID">Pascal:13-0322856</idno>
<idno type="wicri:Area/Main/Corpus">000674</idno>
<idno type="wicri:Area/Main/Repository">000837</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0018-9480</idno>
<title level="j" type="abbreviated">IEEE trans. microwave theor. tech.</title>
<title level="j" type="main">IEEE transactions on microwave theory and techniques</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Critical parameter</term>
<term>Cryogenic temperature</term>
<term>Cryogenics</term>
<term>Drain current</term>
<term>Electric current measurement</term>
<term>GHz range</term>
<term>High electron mobility transistor</term>
<term>Impact ionization</term>
<term>Impedance</term>
<term>Low noise amplifier</term>
<term>MMIC</term>
<term>Microwave amplifier</term>
<term>Microwave integrated circuits</term>
<term>Monolithic integrated circuit</term>
<term>Noise measurement</term>
<term>Radio astronomy</term>
<term>Wide band</term>
<term>Wide band noise</term>
<term>Wideband amplifiers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Mesure bruit</term>
<term>Transistor mobilité électron élevée</term>
<term>Bruit large bande</term>
<term>Amplificateur faible bruit</term>
<term>Paramètre critique</term>
<term>Courant drain</term>
<term>Mesure courant électrique</term>
<term>Impédance</term>
<term>Ionisation choc</term>
<term>Amplificateur large bande</term>
<term>Domaine fréquence GHz</term>
<term>Large bande</term>
<term>Cryogénie</term>
<term>Température cryogénique</term>
<term>Amplificateur hyperfréquence</term>
<term>Circuit intégré monolithique</term>
<term>Circuit intégré hyperfréquence</term>
<term>Circuit MMIC</term>
<term>Radioastronomie</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, T<sub>drain</sub>
, in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistors with 50-Ω generator impedance. The dc I-V for the transistors under test are presented and effects of impact-ionization are noted. InP devices with both 100% and 75% indium mole fraction in channel are included. Examples of the design and measurement of very wideband low-noise amplifiers (LNAs) using the tested transistors are presented. At 20-K physical temperature the GaAs LNA achieves < 10-K noise over the 0.7-16-GHz range with 16 mW of power and an InP LNA measures < 20-K noise over the 6-50-GHz range with 30 mW of power.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0018-9480</s0>
</fA01>
<fA02 i1="01"><s0>IETMAB</s0>
</fA02>
<fA03 i2="1"><s0>IEEE trans. microwave theor. tech.</s0>
</fA03>
<fA05><s2>61</s2>
</fA05>
<fA06><s2>9</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>AKGIRAY (Ahmed H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>WEINREB (Sander)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LEBLANC (Rémy)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>RENVOISE (Michel)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>FRIJLINK (Peter)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>LAI (Richard)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>SARKOZY (Stephen)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electrical Engineering, California Institute of Technology</s1>
<s2>Pasadena, CA 91125</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>OMMIC</s1>
<s2>94453 Limeil-Brévannes</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Northrop Grumman Corporation</s1>
<s2>Redondo Beach, CA 90278</s2>
<s3>USA</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA20><s1>3285-3297</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>222G2</s2>
<s5>354000501556060150</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>27 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0322856</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>IEEE transactions on microwave theory and techniques</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The critical parameter, T<sub>drain</sub>
, in the Pospieszalski noise model is determined as a function of drain current by measurements of the 1-GHz noise of discrete transistors with 50-Ω generator impedance. The dc I-V for the transistors under test are presented and effects of impact-ionization are noted. InP devices with both 100% and 75% indium mole fraction in channel are included. Examples of the design and measurement of very wideband low-noise amplifiers (LNAs) using the tested transistors are presented. At 20-K physical temperature the GaAs LNA achieves < 10-K noise over the 0.7-16-GHz range with 16 mW of power and an InP LNA measures < 20-K noise over the 6-50-GHz range with 30 mW of power.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03G02A2</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03G02B</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D03F06A</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Mesure bruit</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Noise measurement</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Transistor mobilité électron élevée</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>High electron mobility transistor</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Transistor movibilidad elevada electrones</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Bruit large bande</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Wide band noise</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Ruido banda ancha</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Amplificateur faible bruit</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Low noise amplifier</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Amplificador bajo ruido</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Paramètre critique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Critical parameter</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Parámetro crítico</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Courant drain</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Drain current</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Corriente dren</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Mesure courant électrique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Electric current measurement</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Impédance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Impedance</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Impedancia</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Ionisation choc</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Impact ionization</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Ionización choque</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Amplificateur large bande</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Wideband amplifiers</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Domaine fréquence GHz</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>GHz range</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Large bande</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Wide band</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Banda ancha</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Cryogénie</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Cryogenics</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Criogenia</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Température cryogénique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Cryogenic temperature</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Temperatura criogénica</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Amplificateur hyperfréquence</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Microwave amplifier</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Amplificador hiperfrecuencia</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Circuit intégré monolithique</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Monolithic integrated circuit</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Circuito integrado monolítico</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Circuit intégré hyperfréquence</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Microwave integrated circuits</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Circuit MMIC</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>MMIC</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Radioastronomie</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Radio astronomy</s0>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Radioastronomía</s0>
<s5>19</s5>
</fC03>
<fN21><s1>301</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers

Noise Measurements of Discrete HEMT Transistors and Application to Wideband Very Low-Noise Amplifiers

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